H5PS5182GFRS6C datasheet(19/64 Pages) HYNIX

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H5PS5182GFRS6C Datasheet(PDF) 19 Page - Hynix Semiconductor

Part No.	H5PS5182GFRS6C

Description	512Mb DDR2 SDRAM

Download	64 Pages

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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Rev.1.7 / Feb. 2013

H5PS5162GFR series

IDD7

Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL

= CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD),

tRCD = 1*tCK(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are

STABLE during DESELECTs; Data pattern is same as IDD4R; - Refer to the following page for

detailed timing conditions

Note:

1. VDDQ = 1.8 +/- 0.1V ; VDD = 1.8 +/- 0.1V

(exclusively VDDQ = 1.9 +/- 0.1V ; VDD = 1.9 +/- 0.1V for C3 speed grade)

2. IDD specifications are tested after the device is properly initialized

3. Input slew rate is specified by AC Parametric Test Condition

4. IDD parameters are specified with ODT disabled.

5. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met

with all combinations of EMRS bits 10 and 11.

6. Definitions for IDD

LOW is defined as Vin £ VILAC(max)

HIGH is defined as Vin Š VIHAC(min)

STABLE is defined as inputs stable at a HIGH or LOW level

FLOATING is defined as inputs at VREF = VDDQ/2

SWITCHING is defined as: inputs changing between HIGH and LOW every other clock cycle (once per two clocks)

for address and control signals, and inputs changing between HIGH and LOW every other data transfer (once per

clock) for DQ signals not including masks or strobes.

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