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H5PS5182GFRS6C Datasheet(PDF) 20 Page - Hynix Semiconductor

Part No. H5PS5182GFRS6C
Description  512Mb DDR2 SDRAM
Download  64 Pages
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5PS5182GFRS6C Datasheet(HTML) 20 Page - Hynix Semiconductor

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Rev.1.7 / Feb. 2013
20
H5PS5162GFR series
For purposes of IDD testing, the following parameters are to be utilized
Detailed IDD7
The detailed timings are shown below for IDD7. Changes will be required if timing parameter changes are made to the
specification.
Legend: A = Active; RA = Read with Autoprecharge; D = Deselect
IDD7: Operating Current: All Bank Interleave Read operation
All banks are being interleaved at minimum tRC(IDD) without violating tRRD(IDD) using a burst length of 4. Control
and address bus inputs are STABLE during DESELECTs. IOUT = 0mA
Timing Patterns for 4 bank devices
-DDR2-400 3/3/3: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D (11 clocks)
-DDR2-533 3/3/3: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D (15 clocks)
-DDR2-533 4/4/4: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D (16 clocks)
-DDR2-667 4/4/4: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D (19 clocks)
-DDR2-667 5/5/5: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D (20 clocks)
-DDR2-800 5/5/5: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D (23 clocks)
-DDR2-800 6/6/6: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D D (24 clocks)
Speed Bin
(CL-tRCD-tRP)
DDR2-800
DDR2-667
DDR2-533
DDR2-400
Units
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
CL(IDD)
5
6
5
4
3
tCK
tRCD(IDD)
12.5
15
15
15
15
ns
tRC(IDD)
57.25
60
60
60
55
ns
tRRD(IDD)
10
10
10
10
10
ns
tCK(IDD)
2.5
2.5
3
3.75
5
ns
tRASmin(IDD)
45
45
45
45
40
ns
tRASmax(IDD)
70000
70000
70000
70000
70000
ns
tRP(IDD)
12.5
15
15
15
15
ns
tRFC(IDD)-512Mb
105
105
105
105
105
ns


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