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H5PS5162GFRS6C Datasheet(PDF) 15 Page - Hynix Semiconductor

Part # H5PS5162GFRS6C
Description  512Mb DDR2 SDRAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5PS5162GFRS6C Datasheet(HTML) 15 Page - Hynix Semiconductor

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Rev.1.7 / Feb. 2013
15
H5PS5162GFR series
3.3 Output Buffer Characteristics
3.3.1 Output AC Test Conditions
3.3.2 Output DC Current Drive
Symbol
Parameter
SSTL_18 Class II
Units
Notes
VOTR
Output Timing Measurement Reference Level
0.5 * VDDQ
V1
1. The VDDQ of the device under test is referenced.
Symbol
Parameter
SSTl_18
Units
Notes
IOH(dc)
Output Minimum Source DC Current
- 13.4
mA
1, 3, 4
IOL(dc)
Output Minimum Sink DC Current
13.4
mA
2, 3, 4
1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ
and VDDQ - 280 mV.
2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280
mV.
3. The dc value of VREF applied to the receiving device is set to VTT
4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test
device drive current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are
delivered to an SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating
point (see Section 3.3) along a 21 ohm load line to define a convenient driver current for measurement.


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