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H5PS5162GFRS6C Datasheet(PDF) 21 Page - Hynix Semiconductor

Part # H5PS5162GFRS6C
Description  512Mb DDR2 SDRAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5PS5162GFRS6C Datasheet(HTML) 21 Page - Hynix Semiconductor

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Rev.1.7 / Feb. 2013
21
H5PS5162GFR series
3.5. Input/Output Capacitance
4. Electrical Characteristics & AC Timing Specification
-40℃ ≤ TCASE ≤ 95℃; VDDQ = 1.8 V +/- 0.1V; VDD = 1.8V +/- 0.1V)
Refresh Parameters by Device Density
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
Parameter
Symbol
DDR2- 400
DDR2- 533
DDR2 667
DDR2 800
Units
Min
Max
Min
Max
Min
Max
Input capacitance, CK and CK
CCK
1.0
2.0
1.0
2.0
1.0
2.0
pF
Input capacitance delta, CK and CK
CDCK
x
0.25
x
0.25
x
0.25
pF
Input capacitance, all other input-only pins
CI
1.0
2.0
1.0
2.0
1.0
1.75
pF
Input capacitance delta, all other input-only pins
CDI
x
0.25
x
0.25
x
0.25
pF
Input/output capacitance, DQ, DM, DQS, DQS
CIO
2.5
4.0
2.5
3.5
2.5
3.5
pF
Input/output capacitance delta, DQ, DM, DQS, DQS
CDIO
x
0.5
x
0.5
x
0.5
pF
Parameter
Symbol
256Mb 512Mb 1Gb
2Gb
4Gb
Units
Refresh to Active
/Refresh command time
tRFC
75
105
127.5
195
327.5
ns
Average periodic refresh interval tREFI
-40℃≤ TCASE ≤ 85℃
7.8
7.8
7.8
7.8
7.8
us
85℃ < TCASE ≤95℃
3.9
3.9
3.9
3.9
3.9
us
Speed
DDR2-800D
DDR2-800E
DDR2-667D
DDR2-533C
DDR2-400B
Units
Bin(CL-tRCD-tRP)
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
Parameter
min
min
min
min
min
CAS Latency
5
6
545
tCK
tRCD
12.5
15
15
15
15
ns
tRP
12.5
15
15
15
15
ns
tRAS
45
45
45
45
40
ns
tRC
57.5
60
60
60
55
ns


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