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H5PS5162GFRS6C Datasheet(PDF) 46 Page - Hynix Semiconductor

Part # H5PS5162GFRS6C
Description  512Mb DDR2 SDRAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5PS5162GFRS6C Datasheet(HTML) 46 Page - Hynix Semiconductor

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Rev.1.7 / Feb. 2013
46
H5PS5162GFR series
3.5. Input/Output Capacitance
4. Electrical Characteristics & AC Timing Specification
( -40℃ ≤ TCASE ≤ 95℃; VDDQ = 1.8 V +/- 0.1V; VDD = 1.8V +/- 0.1V)
Refresh Parameters by Device Density
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
Parameter
Symbol
DDR2- 1066
Units
Min
Max
Input capacitance, CK and CK
CCK
1.0
2.0
pF
Input capacitance delta, CK and CK
CDCK
x
0.25
pF
Input capacitance, all other input-only pins
CI
1.0
1.75
pF
Input capacitance delta, all other input-only pins
CDI
x
0.25
pF
Input/output capacitance, DQ, DM, DQS, DQS
CIO
2.5
3.5
pF
Input/output capacitance delta, DQ, DM, DQS, DQS
CDIO
x
0.5
pF
Parameter
Symbol
256Mb 512Mb
1Gb
2Gb
4Gb
Units
Refresh to Active
/Refresh command time
tRFC
75
105
127.5
195
327.5
ns
Average periodic refresh interval tREFI
-40℃≤ TCASE ≤ 85℃
7.8
7.8
7.8
7.8
7.8
us
85℃ < TCASE ≤95℃
3.9
3.9
3.9
3.9
3.9
us
Speed
DDR2-1066
Units
Bin(CL-tRCD-tRP)
7-7-7
Parameter
min
CAS Latency
7tCK
tRCD : ACT to RD(A) or WT(A) Delay
13.125
ns
tRP : PRE to ACT Delay
13.125
ns
tRAS : ACT to PRE Delay
45 min / 70000 max
ns
tRC : ACT to ACT Delay
58.125
ns
tCK(avg) @ CL=7
1.875 min / 7.5 max
ns


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