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KSD261GTA Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSD261GTA Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted hFE Classification Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 20 V BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 5 V ICBO Collector Cut-off Current VCB=25V, IE=0 0.1 µA IEBO Emitter Cut-off Current VEB=3V, IC=0 0.1 µA hFE DC Current Gain VCE=1V, IC=0.1A 40 400 VCE (sat) Collector-Emitter Saturation Voltage IC=0.5A, IB=50mA 0.18 0.4 V Classification R O Y G hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 KSD261 Low Frequency Power Amplifier • Complement to KSA643 • Collector Power Dissipation : PC=500mW • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1. Emitter 2. Base 3. Collector TO-92 1 |
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