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KSE170 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSE170 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 5 page  ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : KSE170 : KSE171 : KSE172 - 60 - 80 - 100 V V V VCEO Collector-Emitter Voltage : KSE170 : KSE171 : KSE172 - 40 - 60 - 80 V V V VEBO Emitter-Base Voltage - 7 V IC Collector Current (DC) - 3 A ICP Collector Current (Pulse) - 6 A IB Base Current - 1 A PC Collector Dissipation (TC=25°C) 12.5 W Collector Dissipation (Ta=25°C) 1.5 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breaksown Voltage : KSE170 : KSE171 : KSE172 IC = 10mA, IB = 0 -40 -60 -80 V V V ICBO Collector Cut-off Current : KSE170 : KSE171 : KSE172 : KSE170 : KSE171 : KSE172 VCB = - 60V, IB = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 VCB = - 60V, IE = 0, TC = 150°C VCB = - 80V, IE = 0, TC = 150°C VCB = - 100V, IE = 0, TC = 150°C -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 µA µA µA mA mA mA IEBO Emitter Cut-off Current VBE = - 7V, IC = 0 -0.1 µA hFE DC Current Gain VCE = - 1V, IC = - 100mA VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 1.5A 50 30 12 250 VCE(sat) Collector-Emitter Saturation Voltage IC = - 500mA, IB = - 50mA IC = - 1.5A, IB = - 150mA IC = - 3A, IB = - 600mA -0.3 -0.9 -1.7 V V V VBE(sat) Base-Emitter Saturation Voltage IC = - 1.5A, IB = - 150mA IC = - 3A, IB = - 600mA -1.5 -2.0 V V VBE(on) Base-Emitter On Voltage VCE = - 1V, IC = - 500mA -1.2 V fT Current Gain Bandwidth Product VCE = - 10V, IC = - 100mA 50 MHz Cob Output Capacitance VCB = - 10V, IE = 0, f = 0.1MHz 50 pF KSE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications 1 TO-126 1. Emitter 2.Collector 3.Base |
Similar Part No. - KSE170 |
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Similar Description - KSE170 |
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