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KSE801 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSE801 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 3 page  NPN EPITAXIAL KSE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (T C=25 °C) Characteristic Symbol Rating Unit Collector- Base Voltage : KSE800/801 : KSE802/803 Collector-Emitter Voltage : KSE800/801 : KSE802/803 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25 °C) Junction Temperature Storage Temperature VCBO VCEO VEBO IC IB PC TJ TSTG 60 80 60 80 5 4 0.1 40 150 -55 ~ 150 V V V V V A A W °C °C Characteristic Symbol Test Condition Min Max Unit Collector Emitter Breakdown Voltage : KSE800/801 : KSE802/803 Collector Cutoff Current : KSE800/801 : KSE802/803 Collector Cutoff Current Emitter Cutoff Current DC Current Gain : KSE800/802 : KSE801/803 : ALL DEVICES Collector-Emitter Saturation Voltage : KSE800/802 : KSE801/803 : ALL DEVICES Base-Emitter On Voltage : KSE800/802 : KSE801/803 : ALL DEVICES BVCEO ICEO ICBO IEBO hFE VCE(sat) VBE(on) IC = 50mA, IB = 0 VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 TC = 100 °C VBE = 5V, IC = 0 VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A IC = 1.5A, IB = 30mA IC = 2A, IB = 40mA IC = 4A, IB = 40mA VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A 60 80 750 750 100 100 100 100 500 2 2.5 2.8 3 1.2 2.5 3 V V µA µA µA µA mA V V V V V V TO-126 1. Emitter 2. Collector 3. Base ©1999 Fairchild Semiconductor Corporation Rev. B |
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Similar Description - KSE801 |
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