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ALD212900APAL Datasheet(PDF) 3 Page - Advanced Linear Devices |
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ALD212900APAL Datasheet(HTML) 3 Page - Advanced Linear Devices |
3 / 12 page ALD212900/ALD212900A Advanced Linear Devices 3 of 12 PERFORMANCE CHARACTERISTICS OF EPAD® PRECISION MATCHED PAIR MOSFET FAMILY ALD2108xx/ALD2148xx/ALD2129xx/ALD2169xx high precision monolithic quad/dual N-Channel MOSFET arrays are enhanced versions of the ALD1108xx/ALD1109xx EPAD ® MOSFET family, with increased forward transconductance and output conductance, in- tended for operation at very low power supply voltages. These de- vices are also capable of sub-threshold operation with <1nA of op- erating supply currents and at the same time delivering higher out- put drive currents (typ. >50mA). They feature precision Gate Off- set Voltages, VOS , defined as the difference in VGS(th) between MOSFET pairs M1 and M2 or M3 and M4. ALD's Electrically Programmable Analog Device (EPAD ®) technol- ogy provides the industry's only family of matched MOSFET tran- sistors with a range of precision gate-threshold voltage values. All members of this family are designed and actively programmed for exceptional matching of device electrical and temperature charac- teristics. Gate Threshold Voltage VGS(th) values range from -3.50V Depletion Mode to +3.50V Enhancement Mode devices, including standard products with VGS(th) specified at -3.50V, -1.30V, -0.40V, +0.00V, +0.20V, +0.40V, +0.80V, +1.40V, and +3.30V. ALD can also provide any customer desired VGS(th) between -3.50V and +3.50V on a special order basis. For all these devices ALD EPAD technology enables excellent well-controlled gate threshold volt- age, subthreshold voltage, and low leakage characteristics. With well matched design and precision programming, units from differ- ent production lots provide the user with exceptional matching and uniformity characteristics. Built on the same monolithic IC chip, the units also have excellent temperature tracking characteristics. This ALD2108xx/ALD2148xx/ALD2129xx/ALD2169xx EPAD MOSFET Array product family (EPAD MOSFET) is available in three separate categories, each providing a distinctly different set of elec- trical specifications and characteristics. The first category is the ALD210800A/ALD210800/ALD212900A/ALD212900 Zero-Thresh- old™ mode EPAD MOSFETs. The second is the ALD2108xx/ ALD2129xx enhancement mode EPAD MOSFETs. The third cat- egory includes the ALD2148xx/ALD2169xx depletion mode EPAD MOSFETs. (The suffix “xx” denotes threshold voltage in 0.1V steps, for example, xx=08 denotes 0.80V). For each device, there is a zero-tempco bias current and bias voltage point. When a design utilizes such a feature, then the gate-threshold voltage is tempera- ture stable, greatly simplifying certain designs where stability of certain circuit parameters over a temperature range is desired. ALD210800A/ALD210800 (quad) and ALD212900A/ALD212900 (dual) EPAD MOSFETs are Zero Threshold MOSFET transistors in which the individual gate-threshold voltage of each MOSFET is set at zero, defined as VGS(th) = 0.00V at IDS(ON) = 10µA @ VDS(ON) = +0.1V. Zero Threshold MOSFETs operate in the enhancement region when operated above threshold voltage (VGS > 0.00V and IDS > 10µA) and subthreshold region when operated at or below threshold voltage (VGS <= 0.00V and IDS < 10µA). These devices, along with other low VGS(th) members of the product family, enable ultra low supply voltage analog or digital operation and nanopower circuit designs, thereby reducing or eliminating the use of very high valued (expensive) resistors in many cases. The ALD2108xx/ALD2129xx (quad/dual) product family features precision matched enhancement mode EPAD MOSFET devices, which require a positive gate bias voltage VGS to turn on. Precision VGS(th) values at +3.30V, +1.40V, +0.80V, +0.40V and +0.20V are offered. No conductive channel exists between the source and drain at zero applied gate voltage (VGS = 0.00V) for +3.30V, +1.40V and +0.80V versions. The +0.40V and the +0.20V versions have a sub- threshold current at about 1nA and 100nA for the ALD2108xx (2nA and 200nA for the ALD2129xx) respectively at zero applied gate voltage. They are also capable of delivering lower RDS(ON) and higher output currents greater than 68mA (see specifications). The ALD2148xx/ALD2169xx (quad/dual) features Depletion Mode EPAD MOSFETs, which are normally-on devices at zero applied gate voltage. The VGS(th) is set at a negative voltage level (VGS < VS and VGS >V-) at which the EPAD MOSFET turns off. Without a supply voltage and/or with VGS = V- = 0.00V = Ground, the EPAD MOSFET device is already turned on and exhibits a defined and controlled on-resistance RDS(ON). An EPAD MOSFET may be turned off when a negative voltage is applied to V- pin and VGS set more negative than its VGS(th). These Depletion Mode EPAD MOSFETs are different from most other depletion mode MOSFETs and JFETs in that they do not exhibit high gate leakage currents and channel/junction leakage currents, while they stay controlled, modulated and turned off at precise voltages. The same MOSFET device equations as those for enhancement mode devices apply. KEY APPLICATION ENVIRONMENTS EPAD MOSFETs are ideal for circuits requiring low VOS and low operating currents with tracked differential thermal responses. They feature low input bias currents (less than 200pA max.), low input capacitance and fast switching speed. These and other operating characteristics offer unique solutions in one or more of the follow- ing operating environments: * Low supply voltage: 0.1V to 10V or +0.05V to +5V * Ultra low supply voltage: less than +10mV to +0.1V * Nanopower operation: voltage x current = nW or uW * Precision VOS characteristics * Matching and tracking of multiple MOSFETs * Matching across multiple packages ELECTRICAL CHARACTERISTICS The turn-on and turn-off electrical characteristics of the EPAD MOSFET products are shown in the IDS(ON) vs. VDS(ON) and IDS(ON) vs. VGS graphs. Each graph shows IDS(ON) versus VDS(ON) characteristics as a function of VGS in a different operating region under different bias conditions, while IDS(ON) at a given gate input voltage is controlled and predictable. A series of four graphs titled “Forward Transfer Characteristics”, with the second and third sub- titled “expanded (subthreshold)” and “further expanded (subthresh- old)”, and the fourth sub-titled “low voltage”, illustrates the wide dynamic operating range of these devices. Classic MOSFET equations for an N-channel MOSFET also apply to EPAD MOSFETs. The drain current in the linear region (VDS(ON) < VGS - VGS(th)) is given by: IDS(ON) = u . COX . W/L . [VGS - VGS(th) - VDS/2] . VDS(ON) where: u = Mobility COX = Capacitance / unit area of Gate electrode VGS = Gate to Source Voltage VGS(th) = Gate Threshold (Turn-on)Voltage VDS(ON) = Drain to Source On Voltage W = Channel width L = Channel length In this region of operation the IDS(ON) value is proportional to the VDS(ON) value and the device can be used as a gate-voltage con- trolled resistor. For higher values of VDS(ON) where VDS(ON) >= VGS - VGS(th), the saturation current IDS(ON) is now given by (approx.): IDS(ON) = u . COX . W/L . [VGS - VGS(th)]2 |
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