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TGA2450-SM Datasheet(PDF) 3 Page - TriQuint Semiconductor |
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TGA2450-SM Datasheet(HTML) 3 Page - TriQuint Semiconductor |
3 / 9 page TGA2450-SM 2100 MHz, 2.5 W, Small Cell PA Module Datasheet: Rev B 08-14-13 - 3 of 9 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Electrical Specifications at TCASE = −40°C to +90°C Test conditions unless otherwise noted: VCC1 = 5 V, VCC2 = 18 V, VCC3 = 18 V, VCC4 = 18 V, ICQ1 = 60 mA, ICQ2 = 25 mA, ICQ3 = 90 mA, POUT = 34 dBm, System impedance = 50 Ω Parameter Conditions Min Typ Max Units Power Gain POUT = 34 dBm average 29.9 38.6 dB ICQ1 VCC1 = 5 V 29 60 86 mA ICQ2+ICQ3 VCC2 = VCC3 = 18 V 84 115 146 mA ICC1 VCC1 = 5 V, Pout = 34 dBm average 95 mA Gain flatness across any 40 MHz in-band POUT = 34 dBm average 1 2 dB P3dB Pulsed, 10 µsec width, 1 msec period 41 dBm Power Added Efficiency POUT = 34 dBm average 30 % Input Return Loss POUT = 34 dBm average 13 11 dB Second Harmonic POUT = 34 dBm at f0 with WCDMA, 3.84 MHz IBW −43 dBc Third Harmonic POUT = 34 dBm at f0 with WCDMA, 3.84 MHz IBW −37 dBc Group delay 5 nS Group delay ripple 750 pS |S12|-|S21| 15 dB Thermal Resistance, θjc (1) (junction to case), TCASE = 90°C 14.8 °C/W Notes: 1. Measured carrier amplifier junction to package backside. |
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