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PE64906 Datasheet(PDF) 2 Page - Peregrine Semiconductor |
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PE64906 Datasheet(HTML) 2 Page - Peregrine Semiconductor |
2 / 11 page Page 2 of 11 ©2013 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-30114-3 │ UltraCMOS® RFIC Solutions Product Specification PE64906 Table 1. Electrical Specifications @ 25°C, VDD = 2.75V (In shunt configuration, RF- connected to GND) Parameter Condition Min Typ Max Unit Operating frequency 100 3000 MHz Minimum capacitance (Cmin) State = 00000, 100 MHz 0.81 0.9 0.99 pF Maximum capacitance (Cmax) State = 11111, 100 MHz 4.14 4.6 5.06 pF Tuning ratio Cmax/Cmin, 100 MHz 5.1:1 Step size 5 bits (32 states), 100 MHz 0.119 pF Quality factor at Cmin1 698 - 960 MHz, with LS removed 1710 - 2170 MHz, with LS removed 40 40 Quality factor at Cmax1 698 - 960 MHz, with LS removed 1710 - 2170 MHz, with LS removed 29 13 Self resonant frequency State 00000 State 11111 7.9 2.8 GHz Harmonics2 2fo, 3fo: 698 - 915 MHz; PIN = +34 dBm, 50Ω 2fo, 3fo: 1710 - 1910 MHz; PIN = +32 dBm, 50Ω -36 -36 dBm dBm IMD3 Bands I,II,V/VIII, +20 dBm CW @ TX freq, -15 dBm CW @ 2TX-RX freq, 50Ω -105 dBm Switching time3,4 State change to 10/90% delta capacitance between any two states 12 µs Start-up time3 Time from VDD within specification to all performances within specification 70 µs Wake-up time3,4 State change from Standby mode to RF state to all performances within specification 70 µs Third order intercept point (IP3) Shunt configuration derived from IMD3 spec IP3 = (2PTX + Pblock - IMD3) / 2 65 dBm Notes: 1. Q for a shunt DTC based on a series RLC equivalent circuit Q = XC / R = (X - XL) / R, where X = XL + XC , XL = 2*pi*f*L, XC = -1 / (2*pi*f*C), which is equal to removing the effect of parasitic inductance LS 2. In shunt between 50Ω ports. Pulsed RF input with 4620 µS period, 50% duty cycle, measured per 3GPP TS 45.005 3. DC path to ground at RF– must be provided to achieve specified performance 4. State change activated on falling edge of SEN following data word |
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