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CR05BM-12A-DB00 Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # CR05BM-12A-DB00
Description  600V - 0.5A - Thyristor Low Power Use
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

CR05BM-12A-DB00 Datasheet(HTML) 1 Page - Renesas Technology Corp

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R07DS0992EJ0100 Rev.1.00
Page 1 of 7
Dec 20, 2012
Preliminary Datasheet
CR05BM-12A
600V - 0.5A - Thyristor
Low Power Use
Features
 I
T (AV) : 0.5 A
 V
DRM : 600 V
 I
GT : 100 A
 Planar Type
Outline
1
3
2
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92*)
1. Anode
2. Gate
3. Cathode
3
1
2
Applications
Igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control application
Maximum Ratings
Voltage class
Parameter
Symbol
12
Unit
Repetitive peak reverse voltage
VRRM
600
V
Non-repetitive peak reverse voltage
VRSM
720
V
DC reverse voltage
VR(DC)
480
V
Repetitive peak off-state voltage
Note1
VDRM
600
V
DC off-state voltage
Note1
VD(DC)
480
V
Notes: 1. With gate to cathode resistance RGK = 1 k.
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
0.63
A
Average on-state current
IT (AV)
0.4
A
Commercial frequency, sine half
wave 180
 conduction, Ta = 54C
0.5
A
Commercial frequency, sine half
wave 180
 conduction, Ta = 30C
Surge on-state current
ITSM
8
A
50 Hz sine half wave 1 full cycle,
peak value, non-repetitive
I
2t for fusion
I
2t
0.32
A
2s
Value corresponding to 1 cycle of half
wave 50 Hz, surge on-state current
Peak gate power dissipation
PGM
0.5
W
Average gate power dissipation
PG (AV)
0.1
W
Peak gate forward voltage
VFGM
6
V
Peak gate reverse voltage
VRGM
6
V
Peak gate current
IFGM
0.3
A
Junction Temperature
Tj
–40 to +125
C
Storage temperature
Tstg
–40 to +125
C
Mass
0.23
g
Typical value
R07DS0992EJ0100
Rev.1.00
Dec 20, 2012


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