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CR6PM-12G-A8B00 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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CR6PM-12G-A8B00 Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 8 page  CR6PM-12G Preliminary R07DS0670EJ0100 Rev.1.00 Page 2 of 7 Jul 23, 2012 Parameter Symbol Ratings Unit Conditions RMS on-state current IT(RMS) 9.4 A Average on-state current IT(AV) 6 A Commercial frequency, sine half wave 180 conduction, Tc = 110C Surge on-state current ITSM 90 A 60 Hz sine half wave, 1full cycle, peak value, non-repetitive I 2t for fusing I 2t 34 A 2s Value corresponding to 1cycle of half wave 60 Hz, surge on-state current Peak gate power dissipation PGM 5 W Average gate power dissipation PG(AV) 0.5 W Peak gate forward voltage VFGM 6 V Peak gate reverse voltage VRGM 10 V Peak gate forward current IFGM 2 A Junction temperature Tj – 40 to +150 C Storage temperature Tstg – 40 to +150 C Mass — 2.0 g Typical value Isolation voltage Viso 2000 V Ta = 25 C, AC 1 minute, each terminal to case Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current IRRM — — 2.0 mA Tj = 125 C, V RRM applied — — 5.0 mA Tj = 150 C, V RRM applied Repetitive peak off-state current IDRM — — 2.0 mA Tj = 125 C, V DRM applied — — 5.0 mA Tj = 150 C, V DRM applied On-state voltage VTM — — 1.7 V Tj = 25 C, I TM = 20 A instantaneous value Gate trigger voltage VGT — — 1.0 V Tj = 25 C, V D = 6 V, IT = 1 A Gate non-trigger voltage VGD 0.2 — — V Tj = 125 C, V D = 1/2 VDRM 0.1 — — V Tj = 150 C, V D = 1/2 VDRM Gate trigger current IGT — — 10 mA Tj = 25 C, V D = 6 V, IT = 1 A Holding current IH — 15 — mA Tj = 25°C, VD = 12 V Thermal resistance Rth(j-c) — — 4.0 C/W Junction to case Note1 Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. |
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