VB40170C

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Vishay General Semiconductor

Revision: 11-Jul-12

1

Document Number: 89949

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

Case: TO-263AB

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

2 x 20 A

170 V

200 A

0.68 V

175 °C

TO-263AB

1

2

K

PIN 1

PIN 2

K

HEATSINK

VB40170C

TMBS

®

PARAMETER

SYMBOL

VB40170C

UNIT

Maximum repetitive peak reverse voltage

170

V

Maximum average forward rectified current

(fig. 1)

per device

40

A

per diode

20

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

200

A

dV/dt

10 000

V/μs

Operating junction and storage temperature range

- 40 to + 175

°C