9

Table 3. AC Electrical Specifications

Electrical characteristics over recommended operating conditions. Typical values at 25 °C, VDD = 2.8 V.

Parameter

Symbol

Min.

Typ.

Max.

Units

Notes

Motion Delay after

Reset

50

ms

From RESET register write to valid motion

Forced Rest Enable

1

s

From Rest Mode(RM) bits set to target rest

mode

Wake from Forced

Rest

1

s

From Rest Mode(RM) bits cleared to valid

motion

Power Down

50

ms

From PD active (when bit 1 of register 0x0d is

set) to low current

Wake from Power

Down

50

55

ms

From PD inactive (when write 0x5a to regis-

ter 0x3a) to valid motion

MISO Rise Time

40

200

ns

MISO Fall Time

40

200

ns

MISO Delay after

SCLK

120

ns

From SCLK falling edge to MISO data valid,

no load conditions

MISO Hold Time

500

ns

Data held until next falling SCLK edge

MOSI Hold Time

200

ns

Amount of time data is valid after SCLK rising

edge

MOSI Setup Time

120

ns

From data valid to SCLK rising edge

SPI Time between

Write Commands

30

μs

From rising SCLK for last bit of the first data

byte, Commands to rising SCLK for last bit of

the second data byte

SPI Time between

Write and Read Com-

mands

20

μs

From rising SCLK f or last bit of the first data

byte, to rising SCLK for last bit of the second

address byte

SPI Time between

Read and Subsequent

Commands

250

ns

From rising SCLK for last bit of the first data

byte, to falling SCLK for the first bit of the

next address

SPI Read Address-Data

Delay

4

μs

From rising SCLK for last bit of the address

byte, to falling SCLK for first bit of data being

read

NCS Inactive after Mo-

tion Burst

250

ns

Minimum NCS inactive time after motion

burst before next SPI usage

NCS to SCLK Active

120

ns

From NCS falling edge to first SCLK falling

edge

SCLK to NCS Inactive

(for Read Operation)

120

ns

From last SCLK rising edge to NCS rising

edge, for valid MISO data transfer

SCLK to NCS Inactive

(for Write Operation)

20

μs

From last SCLK rising edge to NCS rising

edge, for valid MOSI data transfer

NCS to MISO high-Z

250

ns

From NCS rising edge to MISO high-Z state

Transient Supply

Current

60

mA

Max supply current during a VDD ramp from

0 to VDD