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MMBTA05 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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MMBTA05 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics T A=25°C unless otherwise noted * Device mounted on FR-4 PCB 1.6” × 0.06" Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 4.0 V IC Collector current - Continuous 500 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1mA, IB = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 100µA, IC = 0 4 V ICEO Collector Cutoff Current VCE = 60V, IB = 0 0.1 µA ICBO Emitter Cutoff Current VCB = 60V, IE = 0 0.1 µA On Characteristics hFE DC Current Gain IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V 100 100 VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 10mA 0.25 V VBE(on) Base-Emitter On Voltage IC = 100mA, VCE = 1.0V 1.2 V Small Signal Characteristics fT Current Gain Bandwidth Product IC = 10mA, VCE = 2V, f = 100MHz 100 MHz Symbol Parameter Max. Units MPSA05 *MMBTA05 PD Total Device Dissipation Derate above 25 °C 625 5 350 2.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W MPSA05/MMBTA05 NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. SOT-23 1. Base 2. Emitter 3. Collector 1 2 3 Mark: 1H TO-92 1 1. Emitter 2. Base 3. Collector |
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Similar Description - MMBTA05 |
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