PNP General Purpose Amplifier

This device is designed for general purpose amplifier applications

at collector currents to 300 mA. Sourced from Process 73. See

MPSA56 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

60

V

Collector-Base Voltage

60

V

Emitter-Base Voltage

4.0

V

Collector Current - Continuous

500

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

MPSA55

*MMBTA55

**PZTA55

Total Device Dissipation

Derate above 25

°C

625

5.0

350

2.8

1,000

8.0

mW

mW/

°C

Thermal Resistance, Junction to Case

83.3

°C/W

Thermal Resistance, Junction to Ambient

200

357

125

°C/W

MPSA55

C

B E

TO-92

MMBTA55

C

B

E

SOT-23

Mark: 2H

PZTA55

B

C

C

SOT-223

E

ã 1997 Fairchild Semiconductor Corporation

MPSA55/MMBTA55/PZTA55, Rev A