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BQ2204ASN Datasheet(PDF) 6 Page - Texas Instruments |
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BQ2204ASN Datasheet(HTML) 6 Page - Texas Instruments |
6 / 13 page 6 AC Test Conditions Parameter Test Conditions Input pulse levels 0V to 3.0V Input rise and fall times 5ns Input and output timing reference levels 1.5V (unless otherwise specified) FG220102.eps 5V 960 100pF CECON 510 Figure 3. Output Load Power-Fail Control (TA =TOPR) Symbol Parameter Minimum Typical Maximum Unit Notes tPF VCC slew, 4.75V to 4.25V 300 - - µs tFS VCC slew, 4.25V to VSO 10 - - µs tPU VCC slew, 4.25V to 4.75V 0 - - µs tCED chip-enable propagation delay - 7 10 ns tAS A,B set up to CE 0- - ns tCER chip-enable recovery 40 80 120 ms Time during which SRAM is write-protected after VCC passes VPFD on power-up. tWPT Write-protect time 40 100 150 µs Delay after VCC slews down past VPFD before SRAM is write-protected. Note: Typical values indicate operation at TA = 25°C, VCC =5V. Caution: Negative undershoots below the absolute maximum rating of -0.3V in battery-backup mode may affect data integrity. Dec. 1992 B bq2204A |
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