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BQ29330DBTG4 Datasheet(PDF) 8 Page - Texas Instruments |
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BQ29330DBTG4 Datasheet(HTML) 8 Page - Texas Instruments |
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8 / 29 page  bq29330 SLUS673E – SEPTEMBER 2005 – REVISED MARCH 2012 www.ti.com ELECTRICAL CHARACTERISTICS (Continued) CELL VOLTAGE MONITOR, TA = 25°C, CREG = 1 μF, CL = 2.2 μF, VCC or BAT = 14 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VCn – VCn+1 = 0 V, 8 V ≤ VDD ≤ 25 V 0.950 0.975 1 V(CELLOUT) V VCn – VCn+1 = 4.5 V, 8 V ≤ VDD ≤ 25 V 0.275 0.3 0.325 REF Mode (1), 8 V ≤ VDD ≤ 25 V –1% 0.975 1% V CELL output Mode PACK –2% PACK/18 2% V [Register Address = 0x03, b1(PACK) = 1, b0( VMEN) = 1] Mode BAT –2% BAT/18 2% V [Register Address = 0X03, b6(BAT) = 1, b0 ( VMEN) = 1] CMRR Common mode rejection CELL max to CELL min 40 dB V(CELLSLEW) CELL output rise Min to Max 10% to 90% 9 ms K = {CELL output (VC5 = 0 V, VC4 = 4.5 V) 0.147 0.150 0.153 –CELL output (VC5 = VC4 = 0 V)} / 4.5 K CELL scale factor K = {CELL output (VC2 = 13.5 V, VC1 = 18 V) 0.147 0.150 0.153 –CELL output (VC2 = VC1 = 13.5 V)} / 4.5 I(VCELLOUT) Drive current VCn– VCn+1 = 0 V , Vcell = 0 V, TA = –40° to 110° 12 18 μA CELL output offset error CELL output (VC2 = 18 V, VC1 = 18 V) VICR –1 mV –CELL output (VC2 = VC1 = 0 V) R(BAL) Cell balance internal resistance RDS(ON) for internal FET switch at VDS = 2 V –50% 400 50% Ω (1) Register Address = 0x04, b2(CAL0) = b3(CAL1) = 1, Register Address = 0x03, b0(VMEN) = 1 CURRENT PROTECTION DETECTION, TA = 25°C, CREG = 1 μF, CL = 2.2 μF, VCC or BAT = 14 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT RSNS = 0 –50 –205 V(OLT) OL detection threshold voltage range, typical(1) mV RSNS = 1 –25 –102.5 RSNS = 0 –5 ΔV(OLT) OL detection threshold voltage program step mV RSNS = 1 –2.5 RSNS = 0 100 475 SCC detection threshold voltage range, typical V(SCCT) mV (2) RSNS = 1 50 237.5 RSNS is set in FUNCTION_CTL register RSNS = 0 25 ΔV(SCCT) SCC detection threshold voltage program step mV RSNS = 1 12.5 RSNS = 0 –100 –475 SCD detection threshold voltage range, V(SCDT) mV typical(3) RSNS = 1 –50 –237.5 RSNS = 0 –25 ΔV(SCDT) SCD detection threshold voltage program step mV RSNS = 1 –12.5 VOL = –25 mV (typ) –15 –25 –35 VOL(acr) VOL = –100 mV (typ) (RSNS = 0,1) –90 –100 –110 mV OL detection threshold voltage accuracy(1) VOL = –205 mV (typ) –185 –205 –225 VSCC = 50 mV (typ) 30 50 70 V(SCC_acr) VSCC = 200 mV (typ) (RSNS = 0,1) 180 200 220 mV SCC detection threshold voltage accuracy(2) VSCC = 475 mV (typ) 428 475 523 VSCD = –50 mV (typ) –30 –50 –70 V(SCD_acr) VSCD = –200 mV (typ) (RSNS = 0,1) –180 –200 –220 mV SCD detection threshold voltage accuracy(3) VSCD = –475 mV (typ) –426 –475 –523 (1) See OLV register for setting detection threshold (2) See SCC register for setting detection threshold (3) See SCD register for setting detection threshold 8 Submit Documentation Feedback Copyright © 2005–2012, Texas Instruments Incorporated Product Folder Link(s): bq29330 |
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