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UCC3957M-3 Datasheet(PDF) 3 Page - Texas Instruments |
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UCC3957M-3 Datasheet(HTML) 3 Page - Texas Instruments |
3 / 15 page UCC39571, UCC39572, UCC39573, UCC39574 SLUS236B – JANUARY 1999 – REVISED SEPTEMBER 2002 3 www.ti.com electrical characteristics over recommended operating free-air temperature range, VDD = 16 V, –20 _C < TA < 70_C, TA = TJ. (unless otherwise noted) supply PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VDDmin Minimum VDD 5.0 5.5 V IDD Supply current 30 40 µA ISL Sleep-mode supply current VDD = 10.4 V 3.5 7.5 µA VIN Input voltage for WU See Note 2 20 V output PARAMETER TEST CONDITIONS MIN TYP MAX UNIT I DCHG o tp t c rrent Driving-logic low, VO = 1 V 40 70 100 µA IDCHG DCHG output current Driving-logic high, VO = (VDD – 1) –13 –3 mA I CHG ouput current Driving-logic low, VO = 1 V 40 70 100 µA ICHG CHG ouput current Driving-logic high, VO = (VDD – 1V) –15 –3 mA state transitions PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOV Normal to overcharge voltage See Note 1 UCC3957 1 4.15 4.20 4.25 V VOVR Overcharge to normal voltage UCC3957–1 3.95 4.00 4.05 V VOV Normal to overcharge voltage See Note 1 UCC3957 2 4.20 4.25 4.30 V VOVR Overcharge to normal voltage UCC3957–2 4.00 4.05 4.10 V VOV Normal to overcharge voltage See Note 1 UCC3957 3 4.25 4.30 4.35 V VOVR Overcharge to normal voltage UCC3957–3 4.05 4.10 4.15 V VOV Normal to overcharge voltage See Note 1 UCC3957 4 4.30 4.35 4.40 V VOVR Overcharge to normal voltage UCC3957–4 4.10 4.15 4.20 V VUV Undercharge to normal voltage See Note 1 2.5 2.6 2.7 V VUVR Normal to undercharge voltage 2.2 2.3 2.4 V tdOV Overvoltage to CHG delay 8 17 23 ms tdUV Undervoltage to DCHG Delay 8 17 23 ms tS Cell sample rate 4 8.5 11.5 ms VSM Smart discharge threshold BATLO voltage 4 15 25 mV VWU Wakeup input threshold With respect to VDD 50 230 750 mV VCE Charge-enable input threshold 0.8 1.3 2.6 V short-circuit protection PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VCL1 First-tier threshold level VBATLO 120 150 190 mV VCL2 Second-tier threshold level VBATLO 275 375 450 mV tB1 First-tier blanking time CDLY1 = 0.1 µF 30 50 70 ms tRST Restart time CDLY1 = 0.1 µF 300 500 700 ms tB2 Second-tier blanking time CDLY2 = 10 pF 100 400 600 µs NOTE 1: Other overvoltage or undervoltage thresholds are available. Please consult the factory. 2: Refer to Figure 6, for WU leakage characteristics. Not Recommended for New Designs |
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