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AME8841VEHAZ Datasheet(PDF) 6 Page - Analog Microelectronics |
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AME8841VEHAZ Datasheet(HTML) 6 Page - Analog Microelectronics |
6 / 14 page AME 6 600mA CMOS LDO AME8841 Rev.H.02 n Absolute Maximum Ratings n Recommended Operating Conditions n Thermal Information Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device. * HBM B:2000V~3999V Parameter Maximum Unit Input Voltage 8 V Output Current PD / (VIN - VO) A Input, Output Voltage GND - 0.3 to VIN + 0.3 V ESD Classification B* Parameter Symbol Rating Unit Ambient Temperature Range TA - 40 to +85 oC Junction Temperature Range TJ - 40 to +125 oC Storage Temperature Range TSTG - 65 to +150 oC Parameter Package Die Attach Symbol Maximum Unit Thermal Resistance (Junction to Ambient) θ JA 124 oC / W Internal Power Dissipation PD 810 mW Maximum Junction Temperature 150 oC Solder Iron(10 Sec)* 350 oC Non-Conductive Epoxy SO-8 * MIL-STD-202G 210F |
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