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MCR01MZPJ823 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # MCR01MZPJ823
Description  NPN SiGe RF Transistor for Low Noise, High-Gain
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

MCR01MZPJ823 Datasheet(HTML) 4 Page - Renesas Technology Corp

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TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
250
200
150
100
50
0
25
50
75
100
125
150
f = 1 MHz
0.3
0.2
0.1
01
2
3
4
5
VCE = 1 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
VCE = 3 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
VCE = 2 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
35
IB = 20 A
μ
120 A
μ
200 A
μ
140 A
μ
160 A
μ
180 A
μ
80 A
μ
60 A
μ
40 A
μ
100 A
μ
40
20
25
30
15
5
10
01
2
3
4
5
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage VBE (V)
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Remark The graphs indicate nominal characteristics.
NESG3033M14
R09DS0049EJ0300 Rev.3.00
Page 4 of 14
Sep 14, 2012


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