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AD8032ARMZ-REEL Datasheet(PDF) 7 Page - Analog Devices |
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AD8032ARMZ-REEL Datasheet(HTML) 7 Page - Analog Devices |
7 / 21 page AD8031/AD8032 Data Sheet Rev. F | Page 6 of 20 ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Rating Supply Voltage 12.6 V Internal Power Dissipation1 8-Lead PDIP (N) 1.3 W 8-Lead SOIC_N (R) 0.8 W 8-Lead MSOP (RM) 0.6 W 5-Lead SOT-23 (RJ) 0.5 W Input Voltage (Common Mode) ±VS ± 0.5 V Differential Input Voltage ±3.4 V Output Short-Circuit Duration Observe Power Derating Curves Storage Temperature Range (N, R, RM, RJ) −65°C to +125°C Lead Temperature (Soldering 10 sec) 300°C 1 Specification is for the device in free air: 8-Lead PDIP: θJA = 90°C/W. 8-Lead SOIC_N: θJA = 155°C/W. 8-Lead MSOP: θJA = 200°C/W. 5-Lead SOT-23: θJA = 240°C/W. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated by the AD8031/AD8032 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Exceeding this limit temporarily can cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure. While the AD8031/AD8032 are internally short-circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (150°C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves shown in Figure 7. 2.0 1.5 0 1.0 0.5 5-LEAD SOT-23 TJ = +150°C 8-LEAD PDIP 8-LEAD SOIC AMBIENT TEMPERATURE (°C) 8-LEAD MSOP –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 Figure 7. Maximum Power Dissipation vs. Temperature ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. |
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