NXP Semiconductors

PMDXB950UPE

20 V, dual P-channel Trench MOSFET

PMDXB950UPE

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Product data sheet

10 September 2013

8 / 15

0.0

-2.0

-1.5

-0.5

-1.0

aaa-006906

1.0

0.5

1.5

2.0

(Ω)

0.0

-3.5 V

-3 V

-2.5 V

-1.8 V

-2.2 V

Fig. 9. Drain-source on-state resistance as a function

of drain current; typical values

0

-5

-4

-2

-3

-1

aaa-006907

2

3

1

4

5

(Ω)

0

Fig. 10. Drain-source on-state resistance as a function

of gate-source voltage; typical values

0

-4

-3

-1

-2

aaa-006908

-0.50

-0.25

-0.75

-1.00

(A)

0.00

Fig. 11. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

-60

180

120

0

60

aaa-006909

1.00

0.75

1.25

1.50

a

0.50

Fig. 12. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values