NXP Semiconductors

PMDXB950UPE

20 V, dual P-channel Trench MOSFET

PMDXB950UPE

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Product data sheet

10 September 2013

9 / 15

-60

180

120

0

60

aaa-006910

-0.5

-1.0

-1.5

(V)

0.0

min

typ

max

Fig. 13. Gate-source threshold voltage as a function of

junction temperature

aaa-006911

-10

-1

10

C

(pF)

1

Fig. 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

aaa-006912

0

1.2

0.8

0.4

-2

-3

-1

-4

-5

(V)

0

Fig. 15. Gate-source voltage as a function of gate

charge; typical values

017aaa137

Fig. 16. Gate charge waveform definitions