PQMD12 datasheet(5/13 Pages) NXP

Part #	PQMD12

Description	NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k

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NXP Semiconductors

PQMD12

NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ

PQMD12

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Product data sheet

24 July 2013

5 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

hFE

DC current gain

VCE = 5 V; IC = 5 mA; Tamb = 25 °C

80

-

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C

-

150

mV

VI(off)

off-state input voltage

VCE = 5 V; IC = 100 µA; Tamb = 25 °C

-

1.2

0.8

V

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 2 mA; Tamb = 25 °C

3

1.6

-

V

R1

resistance 1

33

47

61

kΩ

R2/R1

resistance ratio

Tamb = 25 °C

0.8

1

1.2

VCB = 10 V; IE = 0 A; f = 1 MHz;

Tamb = 25 °C; TR1 (NPN)

-

2.5

pF

Cc

collector capacitance

VCB = -10 V; IE = 0 A; f = 1 MHz;

Tamb = 25 °C; TR2 (PNP)

-

3

pF

VCE = 5 V; IC = 10 mA; f = 100 MHz;

Tamb = 25 °C; TR1 (NPN)

[1]

-

230

-

MHz

fT

transition frequency

VCE = -5 V; IC = -10 mA; f = 100 MHz;

Tamb = 25 °C; TR2 (PNP)

[1]

-

180

-

MHz

[1] Characteristics of built-in transistor

IC (mA)

10-1

102

10

1

006aac752

102

10

103

hFE

1

(1)

(2)

(3)

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 4. NPN transistor: DC current gain as a function of

collector current; typical values

006aac753

IC (mA)

10-1

102

10

1

10-1

1

VCEsat

(V)

10-2

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 5. NPN transistor: Collector-emitter saturation

voltage as a function of collector current;

typical values

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