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TPCA8A04-H Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part # TPCA8A04-H
Description  TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCA8A04-H Datasheet(HTML) 5 Page - Toshiba Semiconductor

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TPCA8A04-H
2010-01-19
5
0
6
3
1
−40
−80
160
0
40
80
120
VGS = 4.5 V
VGS = 10 V
ID = 11A,22A,44A
2
4
ID = 11A,22A,44A
5
50
10
30
40
0
0
20
4
8
12
0
VDD = 6 V
VDS
40
60
100
20
12
24
20
80
16
2.5
1.5
0.5
0
−80
0
40
80
120
160
−40
2.0
1.0
10000
1000
1
0.1
100
10
Ciss
Coss
Crss
100
10
10
4.5
VGS = 0 V
3
−0.2
0
−1.0
−0.6
−0.4
−0.8
100
10
1
1
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
Total gate charge Qg (nC)
Ambient temperature Ta (°C)
RDS (ON) − Ta
Drain-source voltage VDS (V)
IDR − VDS
Drain-source voltage VDS (V)
Capacitance
− VDS
Vth − Ta
Common source
Pulse test
Common source
Ta
= 25°C
Pulse test
Common source
VGS = 0 V
f
= 1 MHz
Ta
= 25°C
Common source
VDS = 10 V
ID = 1 mA
Pulse test
Common source
ID = 44 A
Ta
= 25°C
Pulse test


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