MMBTA42L datasheet(2/6 Pages) ONSEMI

Part #	MMBTA42L

Description	High Voltage Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBTA42L, SMMBTA42L, MMBTA43L

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 1.0 mAdc, IB = 0)

MMBTA42, SMMBTA42

MMBTA43

V(BR)CEO

300

200

−

Vdc

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

MMBTA42, SMMBTA42

MMBTA43

V(BR)CBO

300

200

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

V(BR)EBO

6.0

−

Vdc

Collector Cutoff Current

(VCB = 200 Vdc, IE = 0)

MMBTA42, SMMBTA42

(VCB = 160 Vdc, IE = 0)

MMBTA43

ICBO

−

0.1

mAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

MMBTA42, SMMBTA42

(VEB = 4.0 Vdc, IC = 0)

MMBTA43

IEBO

−

0.1

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc)

Both Types

(IC = 10 mAdc, VCE = 10 Vdc)

Both Types

(IC = 30 mAdc, VCE = 10 Vdc)

MMBTA42, SMMBTA42

MMBTA43

hFE

25

40

−

Collector−Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

MMBTA42, SMMBTA42

MMBTA43

VCE(sat)

−

0.5

Vdc

Base−Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

VBE(sat)

−

0.9

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT

50

−

MHz

Collector−Base Capacitance

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)

MMBTA42, SMMBTA42

MMBTA43

Ccb

−

3.0

4.0

pF

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

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