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NDH8502P Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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NDH8502P Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 7 page NDH8502P Rev.C Typical Electrical Characteristics Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. -5 -4 -3 -2 -1 0 -10 -8 -6 -4 -2 0 V , DRAIN-SOURCE VOLTAGE (V) DS -4.0 -4.5 -3.5 -5.0 -3.0 -6.0 V = -10V GS -10 -8 -6 -4 -2 0 0.5 1 1.5 2 2.5 3 I , DRAIN CURRENT (A) D -5.5 -4.5 -4.0 -5.0 -6.0 -10 V = -3.5V GS -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 T , JUNCTION TEMPERATURE (°C) J V = -10V GS I = -2.2A D -6 -5 -4 -3 -2 -1 -10 -8 -6 -4 -2 0 V , GATE TO SOURCE VOLTAGE (V) V = -10V DS GS T = -55°C J 125°C 25°C -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1 1.1 1.2 T , JUNCTION TEMPERATURE (°C) J I = -250µA D V = V GS DS -10 -8 -6 -4 -2 0 0.3 0.6 0.9 1.2 1.5 1.8 I , DRAIN CURRENT (A) D V = -10V GS T = 125°C J 25°C -55°C |
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