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HN85C256AFPI10E Datasheet(PDF) 4 Page - Renesas Technology Corp |
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HN85C256AFPI10E Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 18 page HN58C256AI Series R10DS0218EJ0100 Rev.1.00 Page 4 of 16 Oct 07, 2013 Operation Table Operation CE OE WE I/O Read VIL VIL VIH Dout Standby VIH ×* 1 × High-Z Write VIL VIH VIL Din Deselect VIL VIH VIH High-Z Write inhibit × × VIH — × VIL × — Data polling VIL VIL VIH Dout (I/O7) Program reset × × × High-Z Note: 1. Don’t care Absolute Maximum Ratings Parameter Symbol Value Unit Power supply voltage relative to VSS VCC –0.6 to +7.0 V Input voltage relative to VSS Vin –0.5* 1 to +7.0*3 V Operating temperature range* 2 Topr –40 to +85 °C Storage temperature range Tstg –55 to +125 °C Notes: 1. Vin min: –3.0 V for pulse width ≤ 50 ns 2. Including electrical characteristics and data retention 3. Should not exceed VCC + 1 V. Recommended DC Operating Conditions Parameter Symbol Min Typ Max Unit Supply voltage VCC 4.5 5.0 5.5 V VSS 0 0 0 V Input voltage VIL –0.3* 1 — 0.6 V VIH 3.0 — VCC + 0.3* 2 V Operating temperature Topr –40 — +85 °C Notes: 1. VIL min: –1.0 V for pulse width ≤ 50 ns 2. VIH max: VCC + 1.0 V for pulse width ≤ 50 ns |
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