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HN85C256AFPI10E Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # HN85C256AFPI10E
Description  256k EEPROM (32-kword 횞 8-bit)
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HN85C256AFPI10E Datasheet(HTML) 4 Page - Renesas Technology Corp

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HN58C256AI Series
R10DS0218EJ0100 Rev.1.00
Page 4 of 16
Oct 07, 2013
Operation Table
Operation
CE
OE
WE
I/O
Read
VIL
VIL
VIH
Dout
Standby
VIH
×*
1
×
High-Z
Write
VIL
VIH
VIL
Din
Deselect
VIL
VIH
VIH
High-Z
Write inhibit
×
×
VIH
—
×
VIL
×
—
Data polling
VIL
VIL
VIH
Dout (I/O7)
Program reset
×
×
×
High-Z
Note:
1. Don’t care
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to VSS
VCC
–0.6 to +7.0
V
Input voltage relative to VSS
Vin
–0.5*
1 to +7.0*3
V
Operating temperature range*
2
Topr
–40 to +85
°C
Storage temperature range
Tstg
–55 to +125
°C
Notes: 1. Vin min: –3.0 V for pulse width
≤ 50 ns
2. Including electrical characteristics and data retention
3. Should not exceed VCC + 1 V.
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
4.5
5.0
5.5
V
VSS
0
0
0
V
Input voltage
VIL
–0.3*
1
—
0.6
V
VIH
3.0
—
VCC + 0.3*
2
V
Operating temperature
Topr
–40
—
+85
°C
Notes: 1. VIL min: –1.0 V for pulse width
≤ 50 ns
2. VIH max: VCC + 1.0 V for pulse width
≤ 50 ns


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