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RMLV0408EGSP-4S2 Datasheet(PDF) 10 Page - Renesas Technology Corp |
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RMLV0408EGSP-4S2 Datasheet(HTML) 10 Page - Renesas Technology Corp |
10 / 12 page RMLV0408E Series Preliminary R10DS0217EJ0001 Rev.0.01 Page 10 of 10 2013.09.10 Low VCC Data Retention Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions *24 VCC for data retention VDR 1.5 ─ ─ V Vin ≥ 0V, CS# ≥ VCC-0.2V Data retention current ICCDR ─ 0.4 *23 2 A ~+25°C VCC=3.0V, Vin ≥ 0V, CS# ≥ Vcc-0.2V ─ ─ 3 A ~+40°C ─ ─ 5 A ~+70°C ─ ─ 7 A ~+85°C Chip deselect time to data retention tCDR 0 ─ ─ ns See retention waveform. Operation recovery time tR 5 ─ ─ ms Note 23. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=25ºC), and not 100% tested. 24. CS# controls address buffer, WE# buffer, OE# buffer, and I/O buffer. If CS# controls data retention mode, Vin levels (address, WE#, OE#, I/O) can be in the high-impedance state. Low Vcc Data Retention Timing Waveforms (CS# controlled) CS# VCC CS# Controlled tCDR tR 2.7V 2.7V 2.2V 2.2V VDR CS# ≥ VCC -0.2V |
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