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BFP620F Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # BFP620F
Description  NPN Silicon Germanium RF Transistor
Download  10 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP620F Datasheet(HTML) 3 Page - Infineon Technologies AG

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2007-04-20
BFP620F
3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 50 mA, VCE = 1.5 V, f = 1 GHz
fT
-
65
-
GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb
-
0.12
0.2
pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce
-
0.2
-
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb
-
0.45
-
Noise figure
IC = 5 mA, VCE = 1.5 V, f = 1.8 GHz, ZS = ZSopt
IC = 5 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt
F
-
-
0.7
1.3
-
-
dB
Power gain, maximum stable1)
IC = 50 mA, VCE = 1.5 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Gms
-
21
-
dB
Power gain, maximum available1)
IC = 50 mA, VCE = 1.5 V, ZS = ZSopt,
ZL = ZLopt, f = 6 GHz
Gma
-
10
-
dB
Transducer gain
IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
f = 6 GHz
|S21e|2
-
-
19.5
9.5
-
-
dB
Third order intercept point at output2)
VCE = 2 V, IC = 50 mA, ZS=ZL=50 Ω, f = 1.8 GHz
IP3
-
25
-
dBm
1dB Compression point at output
IC = 50 mA, VCE = 2 V, ZS=ZL=50 Ω, f = 1.8 GHz
P-1dB
-
14
-
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
from 0.1 MHz to 6 GHz


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