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BFP640 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BFP640 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 10 page 2007-05-29 BFP640 2 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage TA > 0 °C TA ≤ 0 °C VCEO 4 3.7 V Collector-emitter voltage VCES 13 Collector-base voltage VCBO 13 Emitter-base voltage VEBO 1.2 Collector current IC 50 mA Base current IB 3 Total power dissipation1) TS ≤ 90°C Ptot 200 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 300 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 4 4.5 - V Collector-emitter cutoff current VCE = 13 V, VBE = 0 ICES - - 30 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 0.5 V, IC = 0 IEBO - - 3 µA DC current gain IC = 30 mA, VCE = 3 V, pulse measured hFE 110 180 270 - 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance |
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