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SIHFR9110-E3 Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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SIHFR9110-E3 Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 7 page www.kersemi.com 1 Power MOSFET IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9110/SiHFR9110) • Straight Lead (IRFU9110/SiHFU9110) • Available in Tape and Reel • P-Channel • Fast Switching • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU Series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 21 mH, RG = 25 Ω, IAS = - 3.1 A (see fig. 12). c. ISD ≤ - 4.0 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω)VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S G D P-Channel MOSFET DPAK (TO-252) IPAK (TO-251) Available RoHS* COMPLIANT ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free IRFR9110PbF IRFR9110TRLPbFa IRFR9110TRPbFa IRFU9110PbF SiHFR9110-E3 SiHFR9110TL-E3a SiHFR9110T-E3a SiHFU9110-E3 SnPb IRFR9110 IRFR9110TRLa IRFR9110TRa IRFU9110 SiHFR9110 SiHFR9110TLa SiHFR9110Ta SiHFU9110 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C ID - 3.1 A TC = 100 °C - 2.0 Pulsed Drain Currenta IDM - 12 Linear Derating Factor 0.20 W/°C Linear Derating Factor (PCB Mount)e 0.020 Single Pulse Avalanche Energyb EAS 140 mJ Repetitive Avalanche Currenta IAR - 3.1 A Repetitive Avalanche Energya EAR 2.5 mJ Maximum Power Dissipation TC = 25 °C PD 25 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5 Peak Diode Recovery dV/dtc dV/dt - 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 260d |
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