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IRF9530N Datasheet(PDF) 4 Page - Kersemi Electronic Co., Ltd.

Part # IRF9530N
Description  Advanced Process Technology
Download  7 Pages
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Manufacturer  KERSEMI [Kersemi Electronic Co., Ltd.]
Direct Link  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRF9530N Datasheet(HTML) 4 Page - Kersemi Electronic Co., Ltd.

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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
400
800
1200
1600
2000
1
1 0
100
A
DS
-V
, D rain-to -S o urc e V oltage (V )
V
= 0V ,
f = 1 M H z
C
= C
+ C
, C
S H O R TE D
C
= C
C
= C
+ C
GS
iss
g s
g d
d s
rs s
g d
o ss
ds
g d
C iss
C oss
C rss
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
T = 25 °C
T = 15 0°C
J
J
V
= 0V
GS
SD
A
-V
, S ourc e-to-D rain V oltage (V )
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
-V
, Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms
0
10
20
30
40
50
60
0
5
10
15
20
Q , Total Gate Charge (nC)
G
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-8.4A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
IRF9530N
4 / 8
www.kersemi.com


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