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SIHFU014 Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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SIHFU014 Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 7 page www.kersemi.com 2 IRFR014, IRFU014, SiHFR014, SiHFU014 Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 924 µH, RG = 25 Ω, IAS = 7.7 A (see fig. 12). c. ISD ≤ 10 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 260d THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - - 110 °C/W Maximum Junction-to-Ambient (PCB Mount)a RthJA -- 50 Maximum Junction-to-Case (Drain) RthJC -- 5.0 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.068 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 µA VDS = 48 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 4.6 Ab - - 0.20 Ω Forward Transconductance gfs VDS = 25 V, ID = 4.6 A 2.4 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 300 - pF Output Capacitance Coss - 160 - Reverse Transfer Capacitance Crss -29 - Total Gate Charge Qg VGS = 10 V ID = 10 A, VDS = 48 V, see fig. 6 and 13b -- 11 nC Gate-Source Charge Qgs -- 3.1 Gate-Drain Charge Qgd -- 5.8 Turn-On Delay Time td(on) VDD = 30 V, ID = 10 A, RG = 24 Ω, RD = 2.7 Ω, see fig. 10b -10 - ns Rise Time tr -50 - Turn-Off Delay Time td(off) -13 - Fall Time tf -19 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contactc -4.5 - nH Internal Source Inductance LS -7.5 - D S G |
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