NDS9947 datasheet(2/10 Pages) FAIRCHILD

Part #	NDS9947

Description	Dual P-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage

V

GS = 0 V, ID = -250 µA

-20

V

I

DSS

Zero Gate Voltage Drain Current

V

DS = -16 V, VGS = 0 V

-1

µA

T

J = 55°C

-10

µA

I

GSSF

Gate - Body Leakage, Forward

V

GS = 20 V, VDS = 0 V

100

nA

I

GSSR

Gate - Body Leakage, Reverse

V

GS = -20 V, VDS= 0 V

-100

nA

ON CHARACTERISTICS (Note 2)

V

GS(th)

Gate Threshold Voltage

V

DS = VGS, ID = -250 µA

-1

-2.2

-3

V

T

J = 125°C

-0.8

-1.9

-2.5

R

DS(ON)

Static Drain-Source On-Resistance

V

GS = -10 V, ID = -3.5 A

0.08

0.1

Ω

T

J = 125°C

0.11

0.16

V

GS = -4.5 V, ID = -1 A

0.165

0.19

I

D(on)

On-State Drain Current

V

GS = -10 V, VDS = -5 V

-14

A

g

FS

Forward Transconductance

V

DS = -15 V, ID = -3.5 A

5

S

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance

V

DS = -10 V, VGS = 0 V,

f = 1.0 MHz

785

pF

C

oss

Output Capacitance

500

pF

C

rss

Reverse Transfer Capacitance

245

pF

SWITCHING CHARACTERISTICS (Note 2)

t

D(on)

Turn - On Delay Time

V

DD = -10 V, ID = -1 A,

V

GEN = -10 V, RGEN = 6 Ω

9

40

ns

t

r

Turn - On Rise Time

17

25

ns

t

D(off)

Turn - Off Delay Time

26

30

ns

t

f

Turn - Off Fall Time

13

20

ns

Q

g

Total Gate Charge

V

DS = -10 V,

I

D = -3.5 A, VGS = -10 V

19

30

nC

Q

gs

Gate-Source Charge

6

nC

Q

gd

Gate-Drain Charge

12

nC

NDS9947.SAM

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