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IRFR9210 Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRFR9210 Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 7 page www.kersemi.com 2 IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Note a. When mounted on 1" square PCB (FR-4 or G-10 material). THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - - 110 °C/W Maximum Junction-to-Ambient (PCB Mount)a RthJA -- 50 Maximum Junction-to-Case (Drain) RthJC -- 5.0 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 200 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = - 1 mA - - 0.23 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 200 V, VGS = 0 V - - - 100 µA VDS = - 160 V, VGS = 0 V, TJ = 125 °C - - - 500 Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = - 1.1 Ab -- 3.0 Ω Forward Transconductance gfs VDS = - 50 V, ID = - 1.1 A 0.98 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 - 170 - pF Output Capacitance Coss -54 - Reverse Transfer Capacitance Crss -16 - Total Gate Charge Qg VGS = - 10 V ID = - 1.3 A, VDS = - 160 V, see fig. 6 and 13b -- 8.9 nC Gate-Source Charge Qgs -- 2.1 Gate-Drain Charge Qgd -- 3.9 Turn-On Delay Time td(on) VDD = - 100 V, ID = - 2.3 A, RG = 24 Ω, RD = 41 Ω, see fig. 10b -8.0 - ns Rise Time tr -12 - Turn-Off Delay Time td(off) -11 - Fall Time tf -13 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- - 1.9 A Pulsed Diode Forward Currenta ISM -- - 7.6 Body Diode Voltage VSD TJ = 25 °C, IS = - 1.9 A, VGS = 0 Vb -- - 5.8 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = - 2.3 A, dI/dt = 100 A/µsb - 110 220 ns Body Diode Reverse Recovery Charge Qrr - 0.56 1.1 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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