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SIHFR020T Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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SIHFR020T Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 9 page www.kersemi.com 2 IRFR020, IRFU020, SiHFR020, SiHFU020 Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - - 110 °C/W Maximum Junction-to-Ambient (PCB Mount)a RthJA -- 50 Maximum Junction-to-Case (Drain) RthJC -- 3.0 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.073 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 μA VDS = 48 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 8.4 Ab - - 0.10 Ω Forward Transconductance gfs VDS = 25 V, ID = 8.4 A 6.2 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 640 - pF Output Capacitance Coss - 360 - Reverse Transfer Capacitance Crss -79 - Total Gate Charge Qg VGS = 10 V ID = 17 A, VDS = 48 V, see fig. 6 and 13b -- 25 nC Gate-Source Charge Qgs -- 5.8 Gate-Drain Charge Qgd -- 11 Turn-On Delay Time td(on) VDD = 30 V, ID = 17 A, RG = 18 Ω, RD = 1.7 Ω, see fig. 10b -13 - ns Rise Time tr -58 - Turn-Off Delay Time td(off) -25 - Fall Time tf -42 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contactc -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 14 A Pulsed Diode Forward Currenta ISM -- 56 Body Diode Voltage VSD TJ = 25 °C, IS = 14 A, VGS = 0 Vb -- 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μsb - 88 180 ns Body Diode Reverse Recovery Charge Qrr - 0.29 0.64 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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