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SIHFR224TA Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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SIHFR224TA Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 7 page www.kersemi.com 1 Power MOSFET IRFR224, IRFU224, SiHFR224, SiHFU224 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR224/SiHFR224) • Straight Lead (IRFU224/SiHFU224) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. Note a. See device orientation. PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω)VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single N-Channel MOSFET G D S DPAK (TO-252) IPAK (TO-251) Available RoHS* COMPLIANT ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free IRFR224PbF IRFR224TRPbFa IRFR224TRLPbFa IRFU224PbF SiHFR224-E3 SiHFR224T-E3a SiHFR224TL-E3a SiHFU224-E3 SnPb IRFR224 IRFR224TRa IRFR224TRLa IRFU224 SiHFR224 SiHFR224Ta SiHFR224TLa SiHFU224 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 250 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 3.8 A TC = 100 °C 2.4 Pulsed Drain Currenta IDM 15 Linear Derating Factor 0.33 W/°C Linear Derating Factor (PCB Mount)e 0.020 Single Pulse Avalanche Energyb EAS 130 mJ Repetitive Avalanche Currenta IAR 3.8 A Repetitive Avalanche Energya EAR 4.2 mJ Maximum Power Dissipation TC = 25 °C PD 42 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5 Peak Diode Recovery dV/dtc dV/dt 4.8 V/ns |
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