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NCP5351DR2G Datasheet(PDF) 10 Page - ON Semiconductor |
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NCP5351DR2G Datasheet(HTML) 10 Page - ON Semiconductor |
10 / 14 page NCP5351 http://onsemi.com 10 TYPICAL PERFORMANCE CHARACTERISTICS Conditions: VS = 5.0 V; Room Temperature; DRN = 0 V. Figure 9. Bottom Gate Sourcing Current into 0.108 W Figure 10. Bottom Gate Sourcing Figure 11. Top Gate Sourcing Current into 0.108 W Figure 12. Top Gate Sourcing 0 0 CO BG +5.0 V 0 V Input Pulse 50 ns +5.0 V 0 V Input Pulse 50 ns 0 0 CO TG Conditions: BST − DRN = 5.0 V; Room Temperature; DRN = 0 V. VS BST PGND DRN EN CO TG BG +5.0 V R1 1.0 k R2* 0.108 W *Applied after power up and input. C4 100 nF C3 100 nF C2 1.0 mF C1 1.0 mF + − VS BST PGND DRN EN CO TG BG +5.0 V R1 1.0 k R2* 0.108 W *Applied after power up and input. C4 100 nF C3 100 nF C2 1.0 mF C1 1.0 mF + − |
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