Thermal Characteristics

Symbol

Parameter

FQD13N10 / FQU13N10

Unit

Drain-Source Voltage

100

V

Drain Current

10

A

6.3

A

Drain Current

- Pulsed

(Note 1)

40

A

Gate-Source Voltage

± 25

V

Single Pulsed Avalanche Energy

(Note 2)

95

mJ

Avalanche Current

(Note 1)

10

A

Repetitive Avalanche Energy

(Note 1)

4.0

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

6.0

V/ns

2.5

W

40

W

- Derate above 25°C

0.32

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Unit

Thermal Resistance, Junction-to-Case

--

3.13

°C/W

Thermal Resistance, Junction-to-Ambient *

--

50

°C/W

Thermal Resistance, Junction-to-Ambient

--

110

°C/W

* When mounted on the minimum pad size recommended (PCB Mount)

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S

D

G

I-PAK

FQU Series

D-PAK

FQD Series

G

S

D

G

S

D

March 2013

FQD13N10 / FQU13N10

N-Channel QFET MOSFET

100 V, 10 A, 180 mΩ

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor®’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to reduce

on-state resistance, and to provide superior switching

performance and high avalanche energy strength. These

devices are suitable for switched mode power supplies,

audio amplifier, DC motor control, and variable switching

power applications.

Features

• Low Gate Charge (Typ. 12 nC)

• Low Crss (Typ. 20 pF)

• 100% Avalanche Tested

©2000 Fairchild Semiconductor Corporation

FQD13N10 / FQU13N10 Rev. C0

www.fairchildsemi.com