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SI7501DN-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI7501DN-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 15 page www.vishay.com 4 Document Number: 72173 S-81544-Rev. D, 07-Jul-08 Vishay Siliconix Si7501DN P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 150 °C 30 10 1 VSD - Source-to-Drain Voltage (V) TJ = 25 °C - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.04 0.08 0.12 0.16 0 2468 10 ID = 6.4 A VGS - Gate-to-Source Voltage (V) 0 30 50 10 20 Time (s) 40 1 100 600 10 10 -1 10-2 10 -3 Safe Operating Area VDS - Drain-to-Source Voltage * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 TA = 25 °C Single Pulse P(t) = 10 DC 0.1 IDM Limited ID(on) Limited Limited by RDS(on)* BVDSS Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 |
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