SI7115DN-T1-GE3 datasheet(5/13 Pages) VISHAY

Part #	SI7115DN-T1-GE3

Description	P-Channel 150 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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5 / 13 page

Si7115DN

Document Number: 73864

S11-1908-Rev. C, 26-Sep-11

www.vishay.com

5

Vishay Siliconix

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases

where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Current Derating*

0

2

4

6

8

10

0

255075

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Case

0

13

26

39

52

65

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Ambient

0.0

0.4

0.8

1.2

1.6

2.0

0

25

50

75

100

125

150

TC - Case Temperature (°C)

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SI7115DN-T1-GE3 Datasheet(PDF) 5 Page - Vishay Siliconix

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