SI4840DY-T1-E3 datasheet(3/8 Pages) VISHAY

Part #	SI4840DY-T1-E3

Description	N-Channel 40-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 71188

S09-0869-Rev. E, 18-May-09

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3

Vishay Siliconix

Si4840DY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.000

0.004

0.008

0.012

0.016

0.020

0

10203040

50

ID - Drain Current (A)

VGS = 10 V

VGS = 4.5 V

0

2

4

6

8

10

0

7

14

21

28

35

VDS = 20 V

ID = 14 A

Qg - Total Gate Charge (nC)

Source-to-Drain V

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150 °C

TJ = 25 °C

50

10

1

VSD -

oltage (V)

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

500

1000

1500

2000

2500

3000

0

8

16

24

32

40

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.0

0.4

0.8

1.2

1.6

2.0

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 14 A

TJ - Junction Temperature (°C)

0.00

0.01

0.02

0.03

0.04

0

2468

10

ID = 14 A

VGS - Gate-to-Source Voltage (V)

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