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1

Power MOSFET

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A

FEATURES

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

500

1.7

24

6.5

13

Configuration

Single

N-Channel MOSFET

G

D

S

DPAK

(TO-252)

IPAK

(TO-251)

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

DPAK (TO-252)

DPAK (TO-252)

DPAK (TO-252)

DPAK (TO-252)

IPAK (TO-251)

Lead (Pb)-free

IRFR430APbF

IRFU430APbF

SiHFR430A-E3

SiHFU430A-E3

SnPb

IRFR430A

IRFU430A

SiHFR430A

SiHFU430A

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

± 30

Continuous Drain Current

5.0

A

3.2

20

Linear Derating Factor

0.91

W/°C

130

mJ

5.0

A

11

mJ

Maximum Power Dissipation

110

W

dV/dt

3.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s