 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
AO4314 Datasheet(PDF) 2 Page - shenzhen wanhexing Electronics Co.,Ltd |
|
||||||||||||||||||||||||||||||
AO4314 Datasheet(HTML) 2 Page - shenzhen wanhexing Electronics Co.,Ltd |
|
|
2 / 6 page  AO4314 Symbol Min Typ Max Units BVDSS 36 V VDS=36V, VGS=0V 1 TJ=55°C 5 IGSS 100 nA VGS(th) Gate Threshold Voltage 1.2 1.8 2.3 V ID(ON) 219 A 4.2 6 TJ=125°C 6.5 9.5 5.7 8.5 m Ω gFS 90 S VSD 0.7 1 V IS 5.5 A Ciss 980 1225 1470 pF Coss 325 465 605 pF Crss 10 35 60 pF Rg 0.5 1.1 1.6 Ω Qg(10V) 14 18.6 23 nC Qg(4.5V) 6 8.6 12 nC Qgs 2.8 nC Qgd 3.2 nC tD(on) 4.5 ns t 3.5 ns Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time V =10V, V =18V, R =0.9 Ω, Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge VGS=10V, VDS=18V, ID=20A Gate Source Charge Gate Drain Charge Total Gate Charge RDS(ON) Static Drain-Source On-Resistance m Ω IS=1A,VGS=0V VDS=5V, ID=20A VGS=4.5V, ID=20A VDS=VGS ID=250µA VDS=0V, VGS= ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Forward Transconductance Diode Forward Voltage Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=20A Reverse Transfer Capacitance VGS=0V, VDS=18V, f=1MHz SWITCHING PARAMETERS tr 3.5 ns tD(off) 20.3 ns tf 3.5 ns trr 12 15 18 ns Qrr 24 30 36 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=18V, RL=0.9Ω, RGEN=3Ω Turn-Off Fall Time Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialT J=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. Rev 0: December 2010 www.aosmd.com Page 2 of 6 万和兴电子有限公司 www.whxpcb.com |
Similar Part No. - AO4314 |
|
Similar Description - AO4314 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
