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FQD2N60C Datasheet(PDF) 4 Page - Kersemi Electronic Co., Ltd.

Part # FQD2N60C
Description  N-Channel QFET MOSFET
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Manufacturer  KERSEMI [Kersemi Electronic Co., Ltd.]
Direct Link  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

FQD2N60C Datasheet(HTML) 4 Page - Kersemi Electronic Co., Ltd.

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4
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Typical Drain Current Slope
Figure 12. Typical Drain-Source Voltage
vs. Gate Resistance
Slope vs. Gate Resistance
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes:
※
1. V
GS = 0V
2. I
D = 250µA
T
J, Junction Temperature [
oC]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes:
※
1. V
GS =10 V
2. I
D =0.95A
T
J, Junction Temperature [
oC]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
100 ms
DC
10 ms
1 ms
100
µs
Operation in This Area
is Limited by R
DS(on)
Notes :
※
1. T
C = 25
oC
2. T
J = 150
oC
3. Single Pulse
V
DS, Drain-Source Voltage [V]
25
50
75
100
125
150
0.0
0.4
0.8
1.2
1.6
2.0
T
C, Case Temperature [
]
℃
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
0
No te s :
※
1 . Z
θ JC ( t) = 2. 87
/W M a x .
℃
2 . D u ty F a c to r, D = t
1 /t 2
3 . T
JM - T C = P DM * Z θ JC (t)
s ing le pu ls e
D= 0 .5
0.02
0.2
0.0 5
0.1
0.0 1
t
1, S q ua r e W a ve P u l s e D u r a t i on [s ec]
t1
PDM
t2
www.kersemi.com


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