TO-263AB datasheet(3/3 Pages) KERSEMI

Part #	TO-263AB

Description	Metal silicon junction, majority carrier conduction

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Manufacturer	KERSEMI [Kersemi Electronic Co., Ltd.]

Direct Link	http://www.kersemi.com

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MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series

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3

1

10

100

25

50

75

100

125

150

175

Fig. 3 – Typical Instantaneous

Forward Characteristics

Fig. 5 – Typical Junction

Capacitance

Fig. 6 – Typical Transient

Thermal Impedance

Number of Cycles at 60 HZ

Reverse Voltage (V)

0

5

10

15

025

50

75

100

125

150

175

Fig. 1 – Forward Current

Derating Curve

Case Temperature (

°C)

Fig. 2 – Maximum Non-Repetitive

Peak Forward Surge Current

0.01

0.1

0.1 0.2 0.3

0.4 0.5

0.6

0.7 0.8 0.9

1.0

1.1

0

1.0

10

100

Instantaneous Forward Voltage (V)

020

60

40

100

80

0.0001

0.001

0.1

0.01

1

10

100

Fig. 4 – Typical Reverse

Characteristics

Percent of Rated Peak Reverse Voltage (%)

t, Pulse Duration (sec.)

0.01

10

1

0.1

1

10

110

0

100

1000

10000

100

TJ = TJ max.

8.3ms Single Half Sine-Wave

(JEDEC Method)

MBR10H35 -- MBR10H45

MBR10H50 -- MBR10H60

MBR10H35 -- MBR10H45

MBR10H50 -- MBR10H60

TJ = 25

°C

f = 1.0 MHZ

Vsig = 50mVp-p

TJ = 150

°C

TJ = 150

°C

TJ = 125

°C

TJ = 25

°C

TJ = 125

°C

TJ = 25

°C

MBR10H35 -- MBR10H45

MBR10H50 -- MBR10H60

MBRF

MBR, MBRB

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TO-263AB Datasheet(PDF) 3 Page - Kersemi Electronic Co., Ltd.

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