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CM150RX-12A Datasheet(PDF) 3 Page - Powerex Power Semiconductors |
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CM150RX-12A Datasheet(HTML) 3 Page - Powerex Power Semiconductors |
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3 / 6 page  CM150RX-12A Six IGBTMOD™ + Brake NX-Series Module 150 Amperes/600 Volts Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 3 Rev. 11/08 Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Inverter Sector Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 5 6 7 Volts Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C — 1.7 2.1 Volts IC = 150A, VGE = 15V, Tj = 125°C — 1.9 — Volts IC = 150A, VGE = 15V, Chip — 1.6 — Volts Input Capacitance Cies — — 18.0 nF Output Capacitance Coes VCE = 10V, VGE = 0V — — 2.0 nF Reverse Transfer Capacitance Cres — — 0.6 nF Total Gate Charge QG VCC = 300V, IC = 150A, VGE = 15V — 400 — nC Inductive Turn-on Delay Time td(on) — — 120 ns Load Turn-on Rise Time tr VCC = 300V, IC = 150A, — — 100 ns Switch Turn-off Delay Time td(off) VGE = ±15V, — — 350 ns Time Turn-off Fall Time tf RG = 6.2Ω, IE = 150A, — — 600 ns Reverse Recovery Time* trr Inductive Load Switching Operation — — 200 ns Reverse Recovery Charge* Qrr — 5.0 — µC Emitter-Collector Voltage* VEC IE = 150A, VGE = 0V, Tj = 25°C — 2.0 2.8 Volts IE = 150A, VGE = 0V, Tj = 125°C — 1.95 — Volts IE = 150A, VGE = 0V, Chip — 1.9 — Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case** Rth(j-c)Q Per IGBT — — 0.24 °C/W Thermal Resistance, Junction to Case** Rth(j-c)D Per FWDi — — 0.46 °C/W Contact Thermal Resistance** Rth(c-f) Thermal Grease Applied — 0.015 — °C/W Internal Gate Resistance RGint TC = 25°C — 0 — Ω External Gate Resistance RG 4.1 — 41 Ω *Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). **TC, Tf measured point is just under the chips. 34 20.6 0 0 17.3 26.8 41.4 26.0 29.4 35.4 33 32 31 30 29 28 27 26 25 24 23 22 Dimensions in mm (Tolerance: ±1mm) 21 20 19 18 17 16 15 14 13 12 35 36 1 2 3 4 11 10 9 8 7 6 5 IGBT FWDi NTC Thermistor Chip Location (Top View) UP VP WP WN VN UN UP VP WP WN Br Th Br VN UN CHIP LOCATION (TOP VIEW) |
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